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savantic semiconductor product specification silicon pnp power transistors 2SB1157 d escription with to-3pfa package complement to type 2sd1712 high f t wide area of safe operation applications for high power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a i cp collector current-peak -8 a t c =25 60 p c collector power dissipation t a =25 3 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1157 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-3a ;i b =-0.3a -2.0 v v be base-emitter on voltage i c =-3a ; v ce =-5v -1.8 v i cbo collector cut-off current v cb =-100v; i e =0 -50 a i ebo emitter cut-off current v eb =-3v; i c =0 -50 a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe -2 dc current gain i c =-1a ; v ce =-5v 60 200 h fe -3 dc current gain i c =-3a ; v ce =-5v 20 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 130 pf f t transition frequency i c =-0.5a ; v ce =-5v 20 mhz h fe-2 classifications q s p 60-120 80-160 100-200 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1157 package outline fig.2 outline dimensions (unindicated tolerance:0.30mm) downloaded from: http:///

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